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AO4832 - 30V Dual N-Channel MOSFET

General Description

The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4832 30V Dual N-Channel MOSFET General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 10A < 13mW < 17.5mW Top View SOIC-8 Bottom View Top View S2 1 8 G2 2 7 S1 3 6 G1 4 5 D2 D2 D1 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.