AO4832 - 30V Dual N-Channel MOSFET

Datasheet Summary

Description

The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

Alpha & Omega Semiconductors

📥 Download Datasheet

Datasheet Details

Part number	AO4832
Manufacturer	Alpha & Omega Semiconductors
File Size	314.22 KB
Description	30V Dual N-Channel MOSFET
Datasheet	AO4832 Datasheet
Additional preview pages of the AO4832 datasheet.

📁 Similar Datasheet

AO4800 - Dual N-Channel 30V MOSFET (VBsemi)
AO4801 - Dual P-Channel 30V MOSFET (VBsemi)
AO4805 - Dual P-Channel MOSFET (VBsemi)
AO4811 - Dual P-Channel MOSFET (FreesCale)
AO4812 - Dual N-Channel 30V MOSFET (VBsemi)
AO4813 - Dual P-Channel MOSFET (VBsemi)
AO4815 - Dual P-Channel 30V MOSFET (VBsemi)
AO4815 - Dual P-Channel MOSFET (Kexin)
AO4817-HF - Dual P-Channel MOSFET (Kexin)
AO4818 - Dual N-Channel MOSFET (VBsemi)

Other Datasheets by Alpha & Omega Semiconductors

AO4830 - 80V Dual N-Channel MOSFET
AO4836 - Dual N-Channel MOSFET
AO4838 - 30V Dual N-Channel MOSFET
AO4800 - 30V Dual N-Channel MOSFET
AO4800B - 30V Dual N-Channel MOSFET
AO4800BL - Dual N-Channel MOSFET
AO4801 - Dual P-Channel MOSFET
AO4801A - 30V P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

AO4832 30V Dual N-Channel MOSFET General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 10A < 13mW < 17.5mW Top View SOIC-8 Bottom View Top View S2 1 8 G2 2 7 S1 3 6 G1 4 5 D2 D2 D1 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.

Published: Jun 7, 2007 |