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AO4882 - 40V Dual N-Channel MOSFET

General Description

The AO4882 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This is an all purpose device that is suitable for use in a wide range of power conversion applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4882 40V Dual N-Channel MOSFET General Description Product Summary The AO4882 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 40V 8A < 19mΩ < 27mΩ Top View SOIC-8 Bottom View Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.