AOU408 Datasheet | Alpha & Omega Semiconductors

Description The AOU408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOU408 is Pbfree (meets ROHS & Sony 259 specifications). AOU408L is a Green Product ordering option. AOU408 and AOU408L are electrically identical. Features VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 mΩ (VGS =10V) @ 20A RDS(ON) < 31 mΩ (VGS = 6V) TO-251 D Top View Drain Connected to Tab Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Maximum 105 ±25 40 28 100 20 200 100 50 -55 to 175 Units V V A A m J W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1m H Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RθJA RθJC Typ 65 1 Max 80 1.5 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. .. Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=10m A, VGS=0V VDS=84V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C VGS=6V, ID=20A VDS=5V, ID=20A Min 105 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance 1 5 100 2.5 100 21.5 32 24 50 0.73 1 55 2038 2445 28 40 31 3.2 4 µA n A V A mΩ mΩ S V A p F p F p F Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous...