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FMMT491Q - NPN MEDIUM POWER TRANSISTOR

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

BVCEO > 60V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance 500mW Power Dissipa

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature  BVCEO > 60V  IC = 1A Continuous Collector Current  ICM = 2A Peak Pulse Current  RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance  500mW Power Dissipation  hFE Characterized up to 2A for High Current Gain Hold Up  Complementary PNP Type: FMMT591Q  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) SOT23 FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Mechanical Data  Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound.