FMMT491Q Overview
Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Key Features
- IC = 1A Continuous Collector Current
- ICM = 2A Peak Pulse Current
- RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance
- 500mW Power Dissipation
- hFE Characterized up to 2A for High Current Gain Hold Up
- Complementary PNP Type: FMMT591Q
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 &
- Halogen and Antimony Free. “Green” Device (Note
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note
