FDB024N08BL7 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Tele PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies 123 567 4 D2-PAK (TO-263) 1. Package limitation current is 120.
FDB024N08BL7 Key Features
- RDS(on) = 1.7 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
- Low FOM RDS(on) -QG
- Low Reverse Recovery Charge, Qrr = 112 nC
- Soft Reverse Recovery Body Diode
- Enables Highly Efficiency in Synchronous Rectification
- Fast Switching Speed
- RoHS pliant
- Qualified according to JEDEC Standards JESD22-A113F and IPC/JEDEC J-STD-020D.1
FDB024N08BL7 Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit