FDS8813NZ Description
Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A HBM ESD protection level of 5.6KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the...
FDS8813NZ Key Features
- Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A
- Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A
- HBM ESD protection level of 5.6KV typical (note 3)
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS pliant