DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
100V, 60A, RDS(ON)=18mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS guaranteed Green Device Available TO-220 package design APPLICATIONS
Networking Load Switch LED APPLICATIONS
Packages & Pin Assignments GSMDP0966ATF (TO-220) Top View Pin DESCRIPTION
1 Gate 2 Drain 3 Source GSMDP0966A 1 Ordering Information GS P/N GSMDP0966A T F Package Code Pb Free Code Part Number GSMDP0966ATF Marking Information Package TO-220 Quantity Tube 50 PCS ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless otherwise no
Globaltech
