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GSMDP0966A - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V, 60A, RDS(ON)=18mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available.
  • TO-220 package design.

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Datasheet preview – GSMDP0966A

Datasheet Details

Part number GSMDP0966A
Manufacturer Globaltech
File Size 498.94 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDP0966A Datasheet
Additional preview pages of the GSMDP0966A datasheet.

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Full PDF Text Transcription

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GSMDP0966A 100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 100V, 60A, RDS(ON)=18mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ TO-220 package design Applications „ Networking „ Load Switch „ LED Applications Packages & Pin Assignments GSMDP0966ATF (TO-220) Top View Pin Description 1 Gate 2 Drain 3 Source GSMDP0966A www.gs-power.
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