DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
40V, 150A, RDS(ON)=3.8mΩ@VGS=10V Improved dv/dt capability Fast switching Green Device Available TO-220 package design APPLICATIONS
MB / VGA / Vcore POL APPLICATIONS
SMPS 2nd SR Packages & Pin Assignments GSMDP4960TF (TO-220) Top View Pin DESCRIPTION
1 Gate 2 Drain 3 Source GSMDP4960 1 Ordering Information GS P/N GSMDP4960 T F Package Code Pb Free Code Part Number GSMDP4960TF Marking Information Package TO-220 Quantity Tube 50 PCS ABSOLUTE MAXIMUM RATINGS
TC=25ºC Unless otherwise noted Symbol Parameter
Globaltech
