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GSMDP4960 - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 40V, 150A, RDS(ON)=3.8mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • TO-220 package design.

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Datasheet Details

Part number GSMDP4960
Manufacturer Globaltech
File Size 496.60 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDP4960 Datasheet

Full PDF Text Transcription for GSMDP4960 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSMDP4960. For precise diagrams, and layout, please refer to the original PDF.

GSMDP4960 40V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced techno...

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ect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 40V, 150A, RDS(ON)=3.8mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ Green Device Available „ TO-220 package design Applications „ MB / VGA / Vcore „ POL Applications „ SMPS 2nd SR Packages & Pin Assignments GSMDP4960TF (TO-220) Top View Pin Description 1 Gate 2 Drain 3 Source GSM

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