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HM2302G - N-Channel Enhancement Mode Power MOSFET

General Description

The HM2302

uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID = 2.9A RDS(ON) < mΩ @ VGS=2.5V RDS(ON) < mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram 3D  G1 2S Marking and pin Assignment.

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Full PDF Text Transcription for HM2302G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HM2302G. For precise diagrams, and layout, please refer to the original PDF.

HM2302* N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302* uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with g...

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ogy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 2.9A RDS(ON) < mΩ @ VGS=2.5V RDS(ON) < mΩ @ VGS=4.

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