HM2302G - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Part number	HM2302G
Manufacturer	H&M Semiconductor
File Size	425.50 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2302G Datasheet
Additional preview pages of the HM2302G datasheet.

The HM2302

uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

VDS = 20V,ID = 2.9A RDS(ON) < mΩ @ VGS=2.5V RDS(ON) < mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram 3D G1 2S Marking and pin Assignment.

Other Datasheets by H&M Semiconductor

Published: Jun 30, 2025 |