2SD108
Description
High DC current gain- : hFE = 2000 (Min) @ IC = 1A Collector-Emitter Sustaining Voltage- : VCEO(SUS)=80V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD108
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 177.13 KB
Datasheets by Manufacturer
- 2SD1052A — Toshiba — Silicon NPN Transistor
- 2SD1060 — Unisonic Technologies — NPN EPITAXIAL PLANAR SILICON TRANSISTOR
- 2SD1060 — onsemi — Bipolar Transistor
- 2SD1062 — Mospec Semiconductor — Power Transistors
- 2SD1049 — Fuji Electric — TRIPLE DIFFUSED PLANER TYPE TRANSISTOR
- 2SD1071 — Fuji Electric — TRIPLE DIFFUSED TRANSISTOR