Datasheet Details
| Part number | 2SD108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.13 KB |
| Description | NPN Transistor |
| Datasheet | 2SD108-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor.
| Part number | 2SD108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.13 KB |
| Description | NPN Transistor |
| Datasheet | 2SD108-INCHANGE.pdf |
|
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·High DC current gain- : hFE = 2000 (Min) @ IC = 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulator ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 5 A ICP Collector Current-Peak 10 A IB Base Current 0.12 A PC Collector Power Dissipation@TC=25℃ 50 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor INCHANGE Semiconductor 2SD108 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A;
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