Datasheet Details
| Part number | 2SD226 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.73 KB |
| Description | NPN Transistor |
| Datasheet | 2SD226-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD226.
| Part number | 2SD226 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.73 KB |
| Description | NPN Transistor |
| Datasheet | 2SD226-INCHANGE.pdf |
|
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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 50 V 40 V 8 V 3 A ICM Collector Current-Peak 5 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD226 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=30mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
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