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IS61DDSB251236C

Manufacturer: ISSI (now Infineon)

IS61DDSB251236C datasheet by ISSI (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS61DDSB251236C datasheet preview

IS61DDSB251236C Datasheet Details

Part number IS61DDSB251236C
Datasheet IS61DDSB251236C IS61DDSB21M18C Datasheet (PDF)
File Size 954.42 KB
Manufacturer ISSI (now Infineon)
Description 18Mb DDR-II SIO SYNCHRONOUS SRAM
IS61DDSB251236C page 2 IS61DDSB251236C page 3

IS61DDSB251236C Overview

The 18Mb IS61DDSB251236C and IS61DDSB21M18C are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have a separate I/O bus. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed.

IS61DDSB251236C Key Features

  • 512Kx36 and 1Mx18 configuration available
  • On-chip delay-locked loop (DLL) for wide data valid
  • Seperate I/O read and write ports
  • Synchronous pipeline read with self-timed late write
  • Double Data Rate (DDR) interface for read and
  • Fixed 2-bit burst for read and write operations
  • Clock stop support
  • Two input clocks (K and K#) for address and control
  • Two input clocks (C and C#) for data output control
  • Two echo clocks (CQ and CQ#) that are delivered
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

View all ISSI (now Infineon) datasheets

Part Number Description
IS61DDSB21M18C 18Mb DDR-II SIO SYNCHRONOUS SRAM
IS61DDB22M36C 72Mb DDR-II CIO SYNCHRONOUS SRAM
IS61DDB24M18C 72Mb DDR-II CIO SYNCHRONOUS SRAM
IS61DDP2B21M36C 36Mb DDR-IIP CIO SYNCHRONOUS SRAM
IS61DDP2B21M36C1 36Mb DDR-IIP CIO SYNCHRONOUS SRAM
IS61DDP2B21M36C2 36Mb DDR-IIP CIO SYNCHRONOUS SRAM
IS61DDP2B22M18C 36Mb DDR-IIP CIO SYNCHRONOUS SRAM
IS61DDP2B22M18C1 36Mb DDR-IIP CIO SYNCHRONOUS SRAM
IS61DDP2B22M18C2 36Mb DDR-IIP CIO SYNCHRONOUS SRAM
IS61DDP2B41M18C 18Mb DDR-IIP CIO SYNCHRONOUS SRAM

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