IXKC25N80C Description
+125 300 2500 V V V A A A mJ mJ V/ns W °C °C °C °C V~ ISOPLUS220TM E153432 G D S D = Drain, G = Gate, S = Source VDS < VDSS, IF ≤ 17 A, TVJ = 150°C dIR/dt = 100 A/µs TC = 25°C.
IXKC25N80C Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z 3RD generation CoolMos power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low dra