IXKC25N80C Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: www.DataSheet4U.com Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol VDSS VGS VGSM ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 90°C Package lead current limit Io Io = 10A, TC = 25°C = 20A IXKC 25N80C VDSS = 800 V ID25 = 20 A RDS(on) = 150 mΩ Maximum Ratings 800 ±20 ±30 20 14 45 690 0.5 6 140 -55 ... +150 150 -55 ...

Datasheet Details

Part number	IXKC25N80C
Manufacturer	IXYS (now Littelfuse)
File Size	581.17 KB
Description	Power MOSFET
Datasheet	IXKC25N80C_IXYS.pdf

Key Features

Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMos power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low drain to tab capacitance(.

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