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IXTA50N25T - Trench Gate Power MOSFET

Key Features

  • z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages z High Power Density z Easy to Mount z Space Savings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T N-Channel Enhancement Mode VDSS = ID25 = RDS(on) ≤ 250V 50A 60mΩ TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR V GSM ID25 IDM IA EAS PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient Maximum Ratings 250 V 250 V ± 30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM 50 A 130 A TC = 25°C TC = 25°C 5 A 1.5 J TC = 25°C 400 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 s 300 °C 260 °C Mounting Torque (TO-220, TO-3P &TO-247) 1.13 / 10 Mounting Force (TO-263) 10..65 / 2.2..14.6 Nmlb.in. N/lb. TO-263 TO-220 TO-3P TO-247 2.5 g 3.