Overview: Advance Technical Information Standard Power MOSFETs ISOPLUS247TM
(Electrically Isolated Backside) IXTR 30N25 VDSS = ID (cont) = RDS(on) = 250 V 25 A 75 mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol
VDSS V
DGR
VGS V
GSM
ID25 I
DM
IAR EAR E
AS
dv/dt
P D
TJ TJM Tstg TL V
ISOL
Weight
Symbol
VDSS VGS(th) IGSS IDSS
R DS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Maximum Ratings
250 V 250 V
±20 V ±30 V
25 A 120 A
30 A
30 mJ 1.0 J
5 V/ns 150
-55 ... +150 150
-55 ... +150 300
2500
5 W
°C °C °C °C
V~
g Test Conditions
VGS = 0 V, ID = 250µA VDS = VGS, ID = 250µA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. 250 2.0 TJ = 125°C 60 V
4.
