High DC Current Gain-
: hFE = 2000(Min)@ IC= -2.5A
Low Collector-Emitter Saturation Voltage
: VCE(sat) = -1.5V(Max)@ IC= -2.5A
Complement to Type 2SC3145
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general purp
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -2.5A ·Low Collector-Emitter Saturation Voltage
: VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SC3145 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier high fT and high speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Collector Power Dissipation TC=25℃ PC Collector Power Dissipation
Ta=125℃
Tj
Junction Temperature
-8
A
30 W
1.
2SA1259 Datasheet
