| Part number | BUX11N |
|---|---|
| Download | BUX11N Datasheet (PDF) |
| File Size | 206.15 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
BUX11N | Bipolar NPN Device |
TT Electronics |
BUX11 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
SavantIC |
BUX11 | SILICON POWER TRANSISTOR |
Comset Semiconductors |
BUX11 | HIGH POWER TRANSISTOR |
Inchange Semiconductor |
BUX11 | NPN Transistor |
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUX11N TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A;.
