Low Collector Saturation Voltage
High Switching Speed
High Current Current Capability
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power switching circuits
Motor control
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAME
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
BUX12
DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power switching circuits ·Motor control
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEX VCEO
Collector-Base Voltage
Collector-Emitter Voltage VBE= -1.