Datasheet4U Logo Datasheet4U.com

IS45LV44002B - DYNAMIC RAM

General Description

The ISSI IS45LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

Key Features

  • Extended Data-Out (EDO) Page Mode access cycle.
  • TTL compatible inputs and outputs.
  • Refresh Interval:.
  • 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Automotive Temperature Range Option A1: -40°C to +85°C Lead-free available www. DataSheet4U. com ISSI ®.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IS450 OPIC LIGHT DETECTOR WITH BULLT-IN SIGNAL PROCESSING CIRCULT FOR LIGHT MODULATION SYSTEM Sharp Electrionic Components
IS455 Linear Output Type OPIC Light Detector Sharp Electrionic Components
IS456 High Speed Response Type OPIC Light Detector Sharp Electrionic Components
IS457 High Speed Response Type OPIC Light Detector Sharp Electrionic Components
IS45R16160D 256-MBIT SYNCHRONOUS DRAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16160C 256 Mb Single Data Rate Synchronous DRAM
IS45S16160D 256-MBIT SYNCHRONOUS DRAM
IS45S16320B 32M x 16 512Mb SYNCHRONOUS DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS45LV44002B 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: • • • • • – 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Automotive Temperature Range Option A1: -40°C to +85°C Lead-free available www.DataSheet4U.com ISSI ® SEPTEMBER 2005 DESCRIPTION The ISSI IS45LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.