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IS45LV44002B Datasheet Dynamic Ram

Manufacturer: ISSI (now Infineon)

IS45LV44002B Overview

The ISSI IS45LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

IS45LV44002B Key Features

  • Extended Data-Out (EDO) Page Mode access cycle
  • TTL patible inputs and outputs
  • Refresh Interval
  • 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byte Write a

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16160C 256 Mb Single Data Rate Synchronous DRAM
IS45S16160D 256-MBIT SYNCHRONOUS DRAM
IS45S16320B 32M x 16 512Mb SYNCHRONOUS DRAM
IS45S16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400F 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16800E 128Mb SYNCHRONOUS DRAM
IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM

IS45LV44002B Distributor