IS45LV44002B - DYNAMIC RAM

Product Overview

Integrated Silicon Solution

Part number	IS45LV44002B
Manufacturer	Integrated Silicon Solution
File Size	162.37 KB
Description	DYNAMIC RAM
Datasheet	IS45LV44002B Datasheet
Additional preview pages of the IS45LV44002B datasheet.

The ISSI IS45LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

Extended Data-Out (EDO) Page Mode access cycle.
TTL compatible inputs and outputs.
Refresh Interval:.
2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Automotive Temperature Range Option A1: -40°C to +85°C Lead-free available www. DataSheet4U. com ISSI ®.

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Other Datasheets by Integrated Silicon Solution

IS45S16100C1 - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
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Published: Apr 28, 2010 |