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2SC5195 - NPN TRANSISTOR

Datasheet Summary

Features

  • Low Voltage Operation, Low Phase Distortion.
  • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz.
  • Large Absolute Maximum Collector Current.

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Datasheet preview – 2SC5195

Datasheet Details

Part number 2SC5195
Manufacturer NEC
File Size 64.00 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC5195 Datasheet
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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current PACKAGE DRAWINGS (Unit: mm) 1.6±0.1 0.8±0.1 2 0.5 0.5 1.6±0.1 1.0 0.2 –0 +0.1 IC = 100 mA • Supercompact Mini Mold Package 3 ORDERING INFORMATION PART NUMBER 2SC5195 QUANTITY In-bulk products (50 pcs.) Taped products (3 Kpcs/Reel) PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Collector) face to perforation side of the tape. 1 0.75±0.05 0.6 2SC5195-T1 Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.
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