FDG315N Description
This N−Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
FDG315N Key Features
- 2 A, 30 V
- RDS(ON) = 0.12 W @ VGS = 10 V
- RDS(ON) = 0.16 W @ VGS = 4.5 V
- Low Gate Charge (2.1 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70-6 Surface Mount Package
- These Devices are Pb-Free and are RoHS pliant