FDMC86102LZ
Overview
- Shielded Gate MOSFET Technology
- Max RDS(on) = 24 mW at VGS = 10 V, ID = 6.5 A
- Max RDS(on) = 35 mW at VGS = 4.5 V, ID = 5.5 A
- HBM ESD Protection Level > 6 kV Typical (Note 4)
- 100% UIL Tested
- RoHS Compliant
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| FDMC86102LZ | Fairchild Semiconductor | N-Channel Power Trench MOSFET |
| FDMC86102L | Fairchild Semiconductor | MOSFET |
| FDMC86102 | Fairchild Semiconductor | N-Channel Power Trench MOSFET |
| FDMC86106LZ | Fairchild Semiconductor | N-Channel Power Trench MOSFET |