QPD0305 Key Features
- Operating Frequency Range: 3.4
- 3.8 GHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (P3dB): 25.1 W (1)
- Maximum Drain Efficiency: 79.4% (1)
- Efficiency-Tuned P3dB Gain: 18.9 dB (1)
- 7 x 6.5 mm DFN Package
QPD0305 is Dual GaN RF Transistor manufactured by Qorvo.
| Part Number | Description |
|---|---|
| QPD0005M | GaN RF Transistor |
| QPD0012 | Asymmetric Doherty |
| QPD0030 | GaN RF Power Transistor |
| QPD1003 | GaN RF IMFET |
| QPD1006 | RF IMFET |
2 Pieces 5 Pieces 25 Pieces 7” Reel 100 Pieces Short Reel 500 Pieces 13” Reel 2500 Pieces 1 of 9 .qorvo. Extended application of Rating conditions to the device may reduce device reliability. Parameter Min Typ Max Units Gate Voltage (VG1,2) −2.7 V Drain Voltage (VD1,2) +48 V Quiescent Current (IDQ1) 32.5 mA Electrical specifications are measured at specified test conditions.