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QPD0305 - Dual GaN RF Transistor

General Description

2 Pieces 5 Pieces 25 Pieces 7” Reel 100 Pieces Short Reel 500 Pieces 13” Reel 2500 Pieces 1 of 9 www.qorvo.com QPD0305 ® 2x20 W, 48 V, 3.4 3.8 GHz, Dual GaN RF Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Brea

Key Features

  • Operating Frequency Range: 3.4.
  • 3.8 GHz.
  • Operating Drain Voltage: +48 V.
  • Maximum Output Power (P3dB): 25.1 W (1).
  • Maximum Drain Efficiency: 79.4% (1).
  • Efficiency-Tuned P3dB Gain: 18.9 dB (1).
  • 7 x 6.5 mm DFN Package Notes: 1. Single-path load pull data at 3.6 GHz. Functional Block Diagram.

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Datasheet Details

Part number QPD0305
Manufacturer Qorvo
File Size 1.25 MB
Description Dual GaN RF Transistor
Datasheet download datasheet QPD0305 Datasheet

Full PDF Text Transcription for QPD0305 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for QPD0305. For precise diagrams, and layout, please refer to the original PDF.

QPD0305 ® 2x20 W, 48 V, 3.4 – 3.8 GHz, Dual GaN RF Transistor Product Overview The QPD0305 is a dual-path GaN power amplifier in a DFN package which operates from 3.4 to ...

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-path GaN power amplifier in a DFN package which operates from 3.4 to 3.8 GHz. In each path is a single-stage amplifier transistor capable of delivering PSAT of 25.1 W at +48 V operation. Lead-free and RoHS compliant. 6 Pin 7 x 6.5 mm DFN Package Key Features • Operating Frequency Range: 3.4 – 3.8 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (P3dB): 25.1 W (1) • Maximum Drain Efficiency: 79.4% (1) • Efficiency-Tuned P3dB Gain: 18.9 dB (1) • 7 x 6.5 mm DFN Package Notes: 1. Single-path load pull data at 3.6 GHz.

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