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2SD2167 - Power Transistor

Key Features

  • 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) PC=2 W (on 40×40×0.7mm ceramic board) zExternal dimensions (Unit : mm) 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6 4.5 ROHM : MPT3 EIAJ : SC-62 4.0 1.0 2.5 0.5 (1) (2) (3) (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCEO 31.

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Datasheet Details

Part number 2SD2167
Manufacturer ROHM
File Size 57.15 KB
Description Power Transistor
Datasheet download datasheet 2SD2167 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors Power Transistor (31±4V, 2A) 2SD2167 2SD2167 zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) PC=2 W (on 40×40×0.7mm ceramic board) zExternal dimensions (Unit : mm) 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6 4.5 ROHM : MPT3 EIAJ : SC-62 4.0 1.0 2.5 0.5 (1) (2) (3) (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCEO 31±4 31±4 Emitter-base voltage Collector current VEBO IC 5 2 3 Collector power dissipation PC 0.