Full PDF Text Transcription for SGSP351 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SGSP351. For precise diagrams, and layout, please refer to the original PDF.
SGSP351 N - CHANNEL ENHANCEMENT MODE POWER MaS TRANSISTOR TYPE Voss ROS(on) 10 SGSP351 100 V 0.6 {} 6A • HIGH SPEED SWITCHING APPLICATIONS • DCIDC APPLICATIONS • ULTRA FA...
View more extracted text
6A • HIGH SPEED SWITCHING APPLICATIONS • DCIDC APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • MOTOR CONTROL N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typica~ applications include stepper motor and printer hammer drives and switching power supplies TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS VOGR VGS 10 Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 K{}) Gate-source voltage