STMicroelectronics SGSP351
N-CHANNEL POWER MOS TRANSISTORS
APPLICATIONS
● DCIDCAPPLICATIONS
● ULTRA FAST SWITCHING● EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● SWITCHING POWER SUPPLIES
● MOTOR CONTROL N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typica~ applications include stepper motor and printer hammer drives and switching power supplies TO-220 INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
VOGR VGS 10 Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 K{}) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc =100°C Drain current (pulsed) Drain inductive current, clamped Total disSipation at Tc < 25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 100 100 ±20 6 4 24 24 50 0.4 -65 to 150 150 V V V A A A A W W/oC °C °C 1/5 499 SGSP351 THERMAL DATA Rthj _ease...