STMicroelectronics SGSP358
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
| Part No. | SGSP358 |
|---|---|
| Datasheet | SGSP358 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● GENERAL PURPOSE● ULTRA FAST SWITCHING
● EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● D.C. SWITCH
● UNINTERRUPTIBLE POWER SUPPLIES N - channel enhancement mode POWER MaS field effect transistor. Easy drive and very fast switching times make this POWER MaS transistor ideal for high speed switching applications. Typical applications include DC switching, uninterruptible power supplies and drive circuits for power bipolar transistor. , TO-220 INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KG) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc=100°C Drain current (pulsed) Drain inductive current, clamped Ptot Total dissipation at Tc <25°C Derating factor T stg Storage temperature Tj Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 5 50 50 ±20 7 4.4 28 28 50 0.4 -65 to 150 150 V V V A A A A W W/oC °C °C 1/5 505 SGSP358...
