SGSP358
SGSP358 is N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR manufactured by STMicroelectronics.
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE
Voss
Ro S(on)
SGSP358 50 V
0.3 G
7A
- HIGH SPEED SWITCHING APPLICATIONS
- GENERAL PURPOSE
- ULTRA FAST SWITCHING
- EASY DRIVE FOR REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS:
- D.C. SWITCH
- UNINTERRUPTIBLE POWER SUPPLIES
- channel enhancement mode POWER Ma S field effect transistor. Easy drive and very fast switching times make this POWER Ma S transistor ideal for high speed switching applications. Typical applications include DC switching, uninterruptible power supplies and drive circuits for power bipolar transistor.
,
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 KG)
Gate-source voltage
Drain current (cont.) at Tc = 25°C
Drain current (cont.) at Tc=100°C Drain current (pulsed)
Drain inductive current, clamped
Ptot
Total dissipation at Tc <25°C
Derating factor
T stg
Storage temperature
Tj
Max. operating junction temperature
(e) Pulse width limited by safe operating area
June 1988
50 50 ±20 7 4.4 28 28 50 0.4 -65 to 150 150
V V V A A A A W W/o C °C...
