• Part: BUZ111SL
  • Description: Power Transistor
  • Category: Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 120.03 KB
Download BUZ111SL Datasheet PDF
Siemens Semiconductor Group
BUZ111SL
BUZ111SL is Power Transistor manufactured by Siemens Semiconductor Group.
SPP80N05L SIPMOS ® Power Transistor - N channel - Enhancement mode - Logic Level - Avalanche-rated - dv /dt rated - 175°C operating temperature - also in SMD available Pin 1 Pin 2 Pin 3 Type VDS 55 V ID 80 A RDS(on) 0.01 Ω Package Ordering Code TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 100 °C A 80 Pulsed drain current TC = 25 °C IDpuls E AS Avalanche energy, single pulse ID = 80 A, V DD = 25 V, RGS = 25 Ω L = 220 µH, Tj = 25 °C m J IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, di F/dt = 200 A/µs Tjmax = 175 °C 80 25 A m J k V/µs...