ST3401 Overview
Description
ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- Super high density cell design for Extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- V1 ST3401 P Channel Enhancement Mode MOSFET
- 30 ±12 -4.0 -3.2 -15 Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ TA=70℃ PD Operation Junction Temperature TJ
- 1.0 1.25 0.8 150 Storage Temperature Range TSTG
