ST3401 Datasheet | Stanson Technology

P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L z -30V/-4.0A, RDS(ON) = 45mΩ (Typ.) @VGS = -10V z -30V/-3.2A, RDS(ON) = 50mΩ @VGS = -4.5V z -30V/-1.2A, RDS(ON) = 60mΩ @VGS = -2.5V z Super high density cell design for Extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design A1YA Y: Year Code A: Process Code ORDERING INFORMATION Part Number Package Part Marking ST3401S23RG SOT-23-3L A1YA ※ Process Code : A ~ Z ; a ~ z ※ ST3401S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. STP3401 2005. V1 P Channel Enhancement Mode MOSFET -4.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol...