ST3401 Datasheet PDF | Stanson Technology

Stanson Technology ST3401

ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.

Part No.	ST3401
Datasheet	ST3401 Download
Manufacturer	Stanson Technology
Description	P-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L z -30V/-4.0A, RDS(ON) = 45mΩ (Typ.) @VGS = -10V z -30V/-3.2A, RDS(ON) = 50mΩ @VGS = -4.5V z -30V/-1.2A, RDS(ON) = 60mΩ @VGS = -2.5V z Super high density cell design for Extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design 3 A1YA 1 2 Y: Year Code A: Process Code ORDERING INFORMATION Part Number Package Part Marking ST3401S23RG SOT-23-3L A1YA ※ Process Code : A ~ Z ; a ~ z ※ ST3401S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STP3401 2005. V1 ST3401 P Channel Enhancement Mode MOSFET -4.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VDSS VGSS ID...