Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Primary DC-DC Switch
Load Switch
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Sym
Features
- Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A.
- Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A.
- High performance trench technology for extremely low rDS(on).
- High power and current handling capability in a widely used surface mount package.
- Fast switching speed.
- 100% UIL tested.
- RoHS Compliant
General.
FDN8601 Datasheet
