SSM3J35AMFV
SSM3J35AMFV is Silicon P-Channel MOSFET manufactured by Toshiba.
Features
(1) 1.2 V drive (2) Low drain-source on-resistance
: RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ.) (@VGS = -4.5 V)
3. Packaging and Internal Circuit
VESM
1: Gate 2: Source 3: Drain
©2017-2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2017-03
2021-02-01 Rev.3.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-20
VGSS
±10
Drain current (DC)
(Note 1)
-250 m A
Drain current (pulsed)
(Note 1)
-600
Power dissipation
(Note 2)
150 m W
Power dissipation
(Note 3)
Channel...
