1SS388 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm Small package Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current:.
1SS388 is Silicon Diode manufactured by Toshiba .
| Manufacturer | Part Number | Description |
|---|---|---|
SEMTECH |
1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
PanJit Semiconductor |
1SS388 | Silicon Epitaxial Schottky Barrier Type Diode |
LGE |
1SS388 | High Speed Switching Diode |
Micro Commercial Components |
1SS388 | Switching Diode |
JCET |
1SS388 | SCHOTTKY BARRIER DIODE |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm Small package Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current:.