Datasheet Summary
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01
- 11 September 2009
Product data sheet
1. Product profile
1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features
I Logic-level patible I Very fast switching I Trench MOSFET technology I ESD protection up to 3 kV
1.3 Applications
I Relay driver I High-speed line driver I Low-side loadswitch I Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS ID IDM
Quick reference data Parameter drain-source voltage drain current peak drain current
RDSon drain-source...
