BAV70S-Q Key Features
- High switching speed: trr ≤ 4 ns
- Low capacitance: Cd ≤ 1.5 pF
- Low leakage current
- Reverse voltage: VR ≤ 100 V
- Very small SMD plastic package
- Qualified according to AEC-Q101 and remended for use in automotive
- Part: BAV70S-Q
- Description: High-speed switching double diode
- Manufacturer: Nexperia
- Size: 208.85 KB
Other BAV70S-Q Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
BAV70S | High-speed switching diodes |
Infineon |
BAV70S | Silicon Switching Diode |
Unisonic Technologies |
BAV70S | DUAL SURFACE MOUNT SWITCHING DIODE |
Kexin Semiconductor |
BAV70S | High-Speed Double Diode Array |
CYStech |
BAV70S3 | Double diode |