| Part Number | 2N6059 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
ON Semiconductort PNP
Darlington Complementary Silicon Power Transistors
. . . designed for general−purpose amplifier and low frequency switching applications.
2N6052*
NPN
• Hi.
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MAXIMUM RATINGS (1)
Rating Symbol VCEO VCB VEB IC IB 2N6058 80 80 2N6052 2N6059 100 100 Unit Vdc Vdc Vdc Adc Adc Collector *Emitter Voltage Collector *Base Voltage Emitter *Base voltage 5.0 12 20 Collector Current * Continuous Peak Base Current Tota. |
2N6059 Datasheet and Specifications PDF
The 2N6059 is a DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS.
| Part Number | 2N6059 Datasheet |
|---|---|
| Description | SILICON NPN POWER DARLINGTON TRANSISTOR |
| Manufacturer | STMicroelectronics |
| Overview | The 2N6059 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in power linear and low frequency switching applica. For PNP types voltage and current values are negative. June 1997 1/4 2N6059 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.17 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V). |
| Part Number | 2N6059 Datasheet |
|---|---|
| Description | NPN Darlington Power Silicon Transistor |
| Manufacturer | VPT Components |
| Overview |
2N6058 & 2N6059
NPN Darlington Power Silicon Transistors
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/502 • TO-3 (TO-204AA) Package • Designed for Use in High Gain Amplifier and Swit.
* Available in JAN, JANTX, JANTXV per MIL-PRF-19500/502 * TO-3 (TO-204AA) Package * Designed for Use in High Gain Amplifier and Switching Applications Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Rev. V3 Max. Collector - Emitter Bre. |
| Part Number | 2N6059 Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switchin. VEB=5.0V BVCEO IC=100mA, (2N6050, 2N6057) 60 BVCEO IC=100mA, (2N6051, 2N6058) 80 BVCEO IC=100mA, (2N6052, 2N6059) 100 VCE(SAT) IC=6.0A, IB=24mA VCE(SAT) IC=12A, IB=120mA VBE(SAT) IC=12A, IB=120mA VBE(ON) VCE=3.0V, IC=6.0A hFE VCE=3.0V, IC=6.0A 750 hFE VCE=3.0V, IC=12A 100 hfe VC. |