50N06 Datasheet and Specifications PDF

The 50N06 is a N-CHANNEL MOSFET.

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Part Number50N06 Datasheet
ManufacturerCHONGQING PINGYANG
Overview 50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB .
* 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A
* Low gate charge
* Low Ciss
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-.
Part Number50N06 Datasheet
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE . down Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=250µA IF=4A ;VGS= 0 VGS= 10V; ID=25A VGS= ±30V;VDS= 0 VDS= 60V; VGS= 0 MIN TY.
Part Number50N06 Datasheet
DescriptionN-CHANNEL POWER MOSFET
ManufacturerUnisonic Technologies
Overview The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltag. * RDS(ON) ≤ 23mΩ @ VGS=10V, ID=25A * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability
* SYMBOL 2.Drain 1 1 1 TO-220 TO-220F 1 TO-220F1 TO-220F3 1 TO-263 1.Gate 3.Source
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 50N06L-.
Part Number50N06 Datasheet
DescriptionLow voltage high current power MOSFET
ManufacturerUnknown Manufacturer
Overview 50N06 * '6 72 Available RoHS* COMPLIANT ' * 6 VDS ID VGS PD TJ Tstg EAS 52.4 Ciss Coss Crss VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ (TC=25ºC) . st 6 (V) 8 10 102 101 175ඓ 25ඓ 100 0.2 0.4 4. 0.6 0.8 VSD ජ Notes : 1. VGS = 0V 2. 250த s Pulse Test 1.0 1.2 1.4 1.6 (V) 4000 3000 2000 1000 0 10-1 C oss C iss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ජ Notes : 1. VGS = 0 V 2. f = 1 MHz 100 VDS 5. 101 (V) .