.200 Datasheet | Specifications & PDF Download

Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BEG REPRODUCED OR COPI

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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DATA SHEET Solid State Relay OCMOS FET PS7221-2A 8-PIN SOP 200 V BREAK DOWN VOLTAGE 2-ch Optical Coupled MOS FET DESCRIPTION The PS7221-2A is solid

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AB-2003 DigiDice Socket 478 Mini PC System User’s Manual 4200-0382-24 Rev. 1.01 Copyright and Warranty Notice The information in this document is sub

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-, +66DHK-, $+6 SUPER FAST RECOVERY RECTIFIER VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes FEATURES • For thorough hole applications • Low

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NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application

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ST7265 1200CH System-On-Chip Driver for 800RGBx480 TFT LCD Datasheet Sitronix reserves the right to change the contents in this document without prior

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ULN2003,04APG/AFWG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic ULN2003APG,ULN2003AFWG ULN2004APG,ULN2004AFWG 7-ch Darlington Sink D

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UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Recommended for 100W High Fideli

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TB62003,004,006～009P/F/FW TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB62003P,TB62003F,TB62003FW,TB62004P,TB62004F,TB62004FW,TB62006P TB620

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Rev.7/10 AC2091 AC2092 Typical Values 30 TO 2000 MHz TO-8 CASCADABLE AMPLIFIERS AC2091 <1.5 dB +19.5 dBm 30-2200 MHz 17.0 dB AC2092 <1.5 dB +21.5 d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb C ver. This Hynix unbuffered Small Outline Dual In-Line Memory Module(DIMM) series consists of 5

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1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Unit: mm l Average Power Di

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WT2003M03 Version: 1.01 Public Release Date: Dec. 2013 Catalogue Overview Feature Specification Pin Image Audio File Sequence and Memory with Power d

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DDR2 SDRAM AVR201628 (128M X 16 ) AVR200856 (256M X 8 ) AVR200412 (512M X 4 ) Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • JEDEC-standard 1.8V

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PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 4 January 2011 Product data sheet 1. Product profile 1.1 General descrip

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Tenergy Corporation 436 Kato Terrace Fremont CA 94539 Tel: 510-687-0388 Fax: 510-687-0328 TENERGY 18650 2200mAh Li-Ion Cell Product Name: Tenergy L

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CYBLE-222005-00 EZ-BLE Creator Module Not Recommended for New Designs EZ-BLE Creator Module General Description The Cypress CYBLE-222005-00 is a ful

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