0.216 Datasheet | Specifications & PDF Download

RF5216 Quad-Band GSM, Linear EDGE Transmit Module with Fourteen High Linearity TRX Switch Ports The RF5216 is a quad-band GSM/GPRS, linear EDGE transm

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Product Specification SPECIFICATION FOR APPROVAL LC216EXN ( ) Preliminary Specification ( ● ) Final Specification Title BUYER MODEL LGE 21.6” WXG

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IS43/46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D

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IS43LR32160B, IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Sy

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I5216 SERIES Advanced Information PRELIMINARY 8 TO 16 MINUTE VOICE RECORD/PLAYBACK SYSTEM WITH INTEGRATED CODEC GENERAL DESCRIPTION The ChipCorder I

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I5216 SERIES Advanced Information PRELIMINARY 8 TO 16 MINUTE VOICE RECORD/PLAYBACK SYSTEM WITH INTEGRATED CODEC GENERAL DESCRIPTION The ChipCorder I

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hgihwol D wol D IS66WV51216DALL IS66/67WV51216DBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JUL

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BC2161 Sub-1GHz OOK/GFSK Transmitter with Encoder Features • Operating voltage: VDD=2.2V~3.6V • Complete Sub-1GHz OOK/GFSK (BT=0.5) modulation tran

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Transient Voltage Suppressors Chip Integration Technology Corporation 30KPA Series 30000W Leaded Type Transient Voltage Suppressors VOLTAGE : 28 TO

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Integrated Device Technology, Inc. BiCMOS StaticRAM 240K (16K x 15-BIT) CACHE-TAG RAM For PowerPC™ and RISC Processors IDT71216 FEATURES: • 16K x 1

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DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM

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OEL/PD/ODM 16216-9SL/X Ver 1.0 18th April 16 X2 ALPHANUMERIC LCM CONTENTS OVERVIEW FEATURES Functions & Features Mechanical Specifications Dimensional

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IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES • High-speed access time: 55ns • C

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Note • Please read rating and CAUTION (for storage, operating, rating, soldering, mounting and handling) in this catalog to prevent smoking and/or b

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2166 DESCRIPTION ·High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliab

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Features n 77dB SNR n 90dB SFDR n Low Power: 87mW/63mW/45mW n Single 1.8V Supply n CMOS, DDR CMOS, or DDR LVDS Outputs n Selectable Input Ranges: 1VP-

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WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.016@ VGS=4.5V 0.018@ VGS=3.1V 0.020@ VGS=2.5V Descriptions The W

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1N2163 thru 1N2171 (SILICON) lN2163A thru lN2171A lN3580, A, Bthru lN3583, A, B TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Highly reliable refere

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1N2163 thru 1N2171 (SILICON) lN2163A thru lN2171A lN3580, A, Bthru lN3583, A, B TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Highly reliable refere

Rating: 1 ★ (7 votes)

30KW Transient Voltage Suppressor 30KPA28A – 30KPA300CA 30KW Transient Voltage Suppressor Features z Glass passivated junction z 30KW peak pulse

Rating: 1 ★ (7 votes)