0.55-inch Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 55N10 DESCRIPTION ·Drain Current ID= 55A@ TC=25℃ ·Drain Source Volt

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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C/A-5570X 2.0 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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INCHANGE Semiconductor isc Silicon PNP Transistor isc RF Product Specification BC556/BC557/BC558 DESCRIPTION ·High Voltage ·Complement to Type BC546

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isc N-Channel MOSFET Transistor IXTP140N055T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.4mΩ@VGS=10V ·Fully characterized avalanche v

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C/A-5570X 2.0 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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C/A-5570X 2.0 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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isc Silicon NPN Power Transistor BDY55X DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-100@IC = 4A ·Collector-Emitter Saturat

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V)

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isc Silicon PNP Power Transistor TIP2955T DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Satura

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isc Silicon PNP Power Transistor 2SA1553 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V

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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz •High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f

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INCHANGE Semiconductor isc Silicon PNP Transistor isc RF Product Specification BC556/BC557/BC558 DESCRIPTION ·High Voltage ·Complement to Type BC546

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP80NF55-06 ·FEATURES ·Typical RDS(on)=0.005Ω ·Excellent switching performance ·Easy to driv

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1559 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 10A, VCE= 3V ·Hi

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isc Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suff

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isc Silicon NPN Power Transistors TIP55A DESCRIPTION ·50W at 100℃ case temperature ·10A peak collector current ·High-voltage,high forward and revers

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isc Silicon NPN Power Transistor 2SD1554 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Bui

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isc Silicon NPN Power Transistor isc Product Specification 2SD1551 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·L

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