0.55-inch Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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isc Silicon NPN Power Transistor isc Product Specification TIP3055F DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltag

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YELLOW SCDQ5541P/Q/R HIGH EFFICIENCY RED SCDQ5542P/Q/R GREEN SCDQ5543P/Q/R HIGH EFFICIENCY GREEN SCDQ5544P/Q/R Square 0.134 4-Character 5x5 Dot Matri

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isc Silicon PNP Power Transistor MJE2955T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 20-

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 55N10 DESCRIPTION ·Drain Current ID= 55A@ TC=25℃ ·Drain Source Volt

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isc Silicon PNP Power Transistors DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Volta

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- :

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF255 DESCRIPTION ·Drain Current ID=20A@ TC=25℃ ·Drain Source Volt

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isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 8.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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isc N-Channel MOSFET Transistor IXTP200N055T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche v

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB2955 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C

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C/A-5570X 2.0 INCH, 5 X 7 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt

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1.2 inch ( 30.42mm ) 5X7 DOT MATRIX LED DISPLAY DESCRIPTION UVP-1X57A SERIES The UVP-1257AA/1357AA/1457A/1557A is 1.2 inch (30.42mm) height 5X7 dot

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1.2 inch ( 30.42mm ) 5X7 DOT MATRIX LED DISPLAY DESCRIPTION UVP-1X57A SERIES The UVP-1257AA/1357AA/1457A/1557A is 1.2 inch (30.42mm) height 5X7 dot

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·100% avalan

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V)

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INCHANGE Semiconductor isc Silicon PNP Transistor isc RF Product Specification BC556/BC557/BC558 DESCRIPTION ·High Voltage ·Complement to Type BC546

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ADVANCED PRESSURE TECHNOLOGY Series AP 30, 35 & 36 1/4 INCH DIAPHRAGM VALVE Springless – manual and pneumatic (NC & NO) Engineering Data — Series AP

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