2SD1559 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1559 .
High DC Current Gain : hFE= 1000(Min. High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Complement.

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Datasheet Specifications

Part number: 2SD1559
Manufacturer: INCHANGE
File Size: 215.98 KB
Datasheet: 2SD1559-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Curren

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2SD1559 NPN Transistor INCHANGE

INCHANGE 2SD1559-like datasheet