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2SD155 - NPN Transistor

2SD155 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD155 .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min). Wide Area of S.

2SD155 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Cur

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Datasheet Details

Part number
2SD155
Manufacturer
INCHANGE
File Size
177.59 KB
Datasheet
2SD155-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD155-like datasheet