2SD155 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD155 .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min). Wide Area of S.

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Datasheet Specifications

Part number: 2SD155
Manufacturer: INCHANGE
File Size: 177.59 KB
Datasheet: 2SD155-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Cur

2SD155 Distributors

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2SD155 NPN Transistor INCHANGE

INCHANGE 2SD155-like datasheet