IPA030N10N3 G OptiMOSTM3 Power-Transistor Feature.
Infineon
IPP030N10N5 - MOSFET
IPP030N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p.
Infineon
IPP030N10N3 - Power Transistor
IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
Infineon Technologies
IPP030N10N3G - Power Transistor
IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
INCHANGE
IPP030N10N5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP030N10N5，IIPP030N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.0mΩ ·Enhanc.
Infineon
030N10N - Power Transistor
IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
Infineon
030N10N5 - MOSFET
IPP030N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p.
INCHANGE
IPP030N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP030N10N3，IIPP030N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancem.
Infineon
ISC030N10NM6 - MOSFET
ISC030N10NM6 MOSFET OptiMOSTM 6 Power-Transistor, 100 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x.
CRM
CRST030N10N - 100V SkyMOS1 N-MOSFET
() CRST030N10N,CRSS028N10N SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(.
CR Micro
CRST030N10NZ - SkyMOS1 N-MOSFET
() CRST030N10NZ SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excel.
CR Micro
CRST030N10N3Z - SkyMOS3 N-MOSFET
() CRST030N10N3Z,CRSS028N10N3Z SkyMOS3 N-MOSFET 100V, 2.6mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance .
Infineon Technologies
IPA030N10N3G - Power-Transistor
IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
Infineon Technologies
IPI030N10N3G - Power Transistor
IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
Infineon
IPA030N10N3 - Power-Transistor
IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
INCHANGE
IPA030N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 3mΩ (max) ·Enhancement mode ·Fast Switc.
Infineon
IPI030N10N3 - Power Transistor
IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
INCHANGE
IPI030N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI030N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fas.
Infineon
IPA030N10NF2S - MOSFET
IPA030N10NF2S MOSFET StrongIRFETTM 2 Power-Transistor Features • Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch.