1-OF-10 Datasheet | Specifications & PDF Download

STR-W6754 Quasi-Resonant Topology Primary Switching Regulators Features and Benefits ▪ Quasi-resonant topology IC  Low EMI noise and soft switching

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KP321X High Performance Low Cost Off-line PWM Power Switch FEATURES  Integrated with 650V Power MOSFET and HV Startup Circuit  Multi-Mode Control w

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（） SAM Semiconductor Devices CO.,LTD TEL: 86-755-29161458 FAX: 86-755-29161436 Http://www.sam-elec.cn http://deltasic.cn.1688.com E-Mail: deltasic

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KP3310 Offline Inductor-less AC Linear Regulator FEATURES  High Output Voltage Accuracy: 2%  Programmable Output: 5V/3.3V/2.7V  Smart Control to

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KP321X High Performance Low Cost Off-line PWM Power Switch FEATURES  Integrated with 650V Power MOSFET and HV Startup Circuit  Multi-Mode Control w

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NEOFIDELITY NTP8910A High Performance, High Fidelity Power Driver Integrated Full Digital Audio Amplifier Datasheet Preliminary ver. 0.1 NEOFIDELITY,

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GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent

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Photocoupler K101 • K102 • K104 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a cha

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KP3110 、 PWM ⚫ 5V ⚫ 500V MOSFET ⚫ ⚫ ⚫ ⚫ 50mW ⚫ ， VDD ⚫ 31KHz ⚫ ⚫ : ◼ (OLP) ◼ (OTP) ◼ (OCP) ◼ (LEB) ◼ VDD ⚫ TO-92 SOT23-3L ⚫

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GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent

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G080N10T N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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g n i h tors c t i a Sw egul R STR-W6754 Universal-Input/100 W Off-Line QuasiResonant Flyback Switching Regulator The STR-W6754 is a quasi-resonant

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ME8105 PWM Controller of High-performance Current Mode ME8105 General Description PWM controller of high-performance current mode is specially design

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NEOFIDELITY NTP8910A High Performance, High Fidelity Power Driver Integrated Full Digital Audio Amplifier Datasheet Preliminary ver. 0.1 NEOFIDELITY,

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G080N10T N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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Features ◆ Low Profile: Typical height of 1.4mm ◆ Ideal for automated placement ◆ High surge current capability ◆ Solder Dip 260℃，10seconds Mechanical

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GOFORD G03N10 Features • High Density Cell Design for Ultra Low RDS(on) • Special Process Technology for High ESD Capability • Excellent Package for

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DC COMPONENTS CO., LTD. R KBPC 50005 MB 5005 RECTIFIER SPECIALISTS THRU KBPC MB 5010 5010 TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE

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GT1081 10 Woofer – Technical Data SPECIFICATIONS DIAMETER: SENSITIVITY (2.83 V @ 1 M): POWER HANDLING: FREQUENCY RESPONSE: NOMINAL IMPEDANCE: VOICE-C

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KP1060C/KP1061C/KP1062C/KP1063C Non-Isolated Buck APFC Offline LED Power Switch FEATURES  Active PFC for High PF and Low THD  PF>0.9 with Universa

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