1.70.2.00 Datasheet | Specifications & PDF Download

Amiccom www.avantcom.com.tw service@avantcom.com.tw A7700 2.4GHz RF Front End Document Title A7700 Data Sheet, 2.4GHz RF Front End

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IPD70R600P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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BTA40, BTA41, BTB41 Datasheet 800 V and 600 V, 40 A standard Triacs in TOP3 and RD91 package A2 G A1 A1 G A2 RD91 A2 A1 A2 G TOP3 Isolated A1

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Techsource MT9700FCLE/AG FMHDELDCDIACTonEtrKollCerONFIDENTIAL Data Sheet NO DISCLOSURE tVleersiotni:tle title t0i.t1le], Calibri, 28pt font Release

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MMD70R600P Datasheet MMD70R600P 700V 0.6Ω N-channel MOSFET  Description MMD70R600P is power MOSFET using magnachip’s advanced super junction technol

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2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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IPD70R900P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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SHENZHEN BOYECHUANGZHAN ELECTRONICS CO.,LTD KSD-9700 Series Thermal Protector Features or structure KSD-9700 series thermal protector consists of dish

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AEROSEMI MT9700 CASC 80mΩ,Adjustable Fast Response Current-Limited Power-Distribution Switch FEATURES  Compliant to USB Specifications  Integra

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2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier ap

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XP3700M Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance

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Typ: L78S10CV 13:80 kr på ELFA (En nyare modell av LM7810) Kortslutningssäker och överströmsskyddad spänningsregulator i TO220-kapsel Fabr: STM Utsp

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 M

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled

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MMD70R600Q Datasheet MMD70R600Q 700V 0.6Ω N-channel MOSFET  Description MMD70R600Q is power MOSFET using Magnachip’s advanced super junction technol

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PF7001 9V to 27V Input WLED Current Balance Controller with Boost Driver Specification Rev. 2.2 FEATURES  Wide Input Range: 9V to 27V  Adjustable

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DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(B

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SFA70UP20DN 70A, 200V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: trr=40ns • Typical Forward Voltage: VF=0.96V@ IF=35A • Reverse Voltage:

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