10-Channel Datasheet | Specifications & PDF Download

a 2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs AD7811/AD7812 FEATURES 10-Bit ADC with 2.3 ␮s Conversion Time The AD7811 has Four Sin

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ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V : RDS(on) = 0.150 DESCRIPTION This new generation of Trench MOSFETs from

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Shanghai Jin-ec Electronic& Technology Co., Ltd JHW10N60 MAIN CHARACTERISTICS Package N N-CHANNEL MOSFET ID 9.5 A VDSS 600 V Rdson（@Vgs=10V） 0.

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FETek Technology Corp.  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technolo

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PFP10N65 / PFF10N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal s

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low

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BFW10 – BFW11 N CHANNEL SILICON FETS DESCRIPTION : Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect transistors in TO72 metal enve

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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UNISONIC TECHNOLOGIES CO., LTD UF100N07 Preliminary 100A, 70V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF100N07 is a high voltage MOSFET and i

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Description JMTK10N10A JMT N-channel Enhancement Mode Power MOSFET Features  100V, 10A RDS(ON) <110mΩ @ VGS = 10V RDS(ON) <140mΩ @ VGS = 4.5V  Ad

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, S

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Ver 1.2 12-Bit 8-Channel 1MSPS Analog to Digital Converter Datasheet Part Number：B128S102RH Version No. 1.0 1.1 1.2 Publish Time 2017.1 2017.9 2018.

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~Siliconix .,1;11 incorporated VN0610L, VN10KE, VN10KM N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER

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MIG100J7CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG100J7CSB1W (600V/100A 7in1) High Power Switching Applications Motor Control

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WWW.ORIENT-CHIP.COM OCP8108A One-Channel High Power LED Controller ◼ General Description The OCP8108A is a high power LED driver, non-synchronous b

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MHF10N60CT 600V Silicon N-Channel Power MOSFET ■ Features • Fast switching. • ESD improved capability. • Low gate charge. • Low reverse transfer capa

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