10-Channel Datasheet | Specifications & PDF Download

Ordering number : ENA1010A ECH8651R N-Channel Power MOSFET 24V, 10A, 14mΩ, Dual ECH8 http://onsemi.com Features • Low ON-resistance • 2.5V drive •

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PJM10C30PA N and P-Channel Complementary Power MOSFET Product Summary ⚫ N-Channel ⚫ VDS= 30V,ID= 12A ⚫ RDS(on)< 15mΩ @VGS= 10V ⚫ RDS(on)< 20mΩ @VGS=

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100V N-Channel MOSFET General Features  High speed power switching  RDS(ON),typ.=5.0mΩ@VGS=10V  Enhanced body diode dv/dt capability  Enhanced ava

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25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

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J105 / J106 / J107 — N-Channel Switch J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applica

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J105 / J106 / J107 — N-Channel Switch J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applica

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J109 / MMBFJ108 — N-Channel Switch January 2015 J109 / MMBFJ108 N-Channel Switch Features • This device is designed for digital switching applicati

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30V, 100A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFM3010PT uses advanced trench technology and design to provide excellent RDS(on) with low ga

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SPTP10R020HA 100V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=1.75mΩ@VGS=10V  Low Gate Charge Minimize Swit

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MOSFET – N-Channel, POWERTRENCH) 100 V, 57 A, 16 mW FDI150N10 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH proce

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MOSFET – N-Channel, POWERTRENCH) 80 V, 100 A, 4.2 mW FDD86367-F085 Features • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 6

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FDMS9410L-F085 N-Channel Logic Level PowerTrench® MOSFET FDMS9410L-F085 N-Channel Logic Level PowerTrench® MOSFET 40 V, 50 A, 4.1 mΩ Features „ Typi

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J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J105 J106 J107 VGS(off) (V) –4.5 to –10 –2 to –6 –0.5 to –4.5 rDS(on) Ma

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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N-Channel JFET Switch CORPORATION J108 – J110 / SST108 – SST110 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error V

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J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resi

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J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2

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G080N10T N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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100V, 90A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGM107R7T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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40V, 100A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGM042R8T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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