NE5510179A (NEC)
3.5V OPERATION SILICON RF POWER MOSFET
PRELIMINARY DATA SHEET
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 29.5 dBm
(51 views)
CXG1017N (Sony Corporation)
GSM900/1800/1900 SPDT TX/RX Switch
CXG1017N
8 pin SSOP (Plastic)
GSM1800/1900 DPDT TX/RX Antenna Switch For the availability of this product, please contact t
(37 views)
PT61017XPEL (BOURNS)
LAN 10/100 Base-Tx
(0.05)
Features
n IEEE 802.3 Ethernet compatible
n Designed for AMD IC manufacturers
0.25 ± 0.13 (0.01 ± 0.005)
n Fully integrated for adapter, h
(36 views)
M51017AP (Mitsubishi Electric)
Flexible Disk Drive Read/Write and Logic IC
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
(28 views)
KSB1017 (INCHANGE)
PNP Transistor
isc Silicon PNP Power Transistor
KSB1017
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Compl
(28 views)
NDSH10170A (ON Semiconductor)
SiC Schottky Diode
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L
NDSH10170A
Description Silicon Carbide (SiC) Schottky Diodes use a comple
(27 views)
PE-61017 (Pulse)
Control Transformers
GENERAL PURPOSE TRANSFORMERS
Control Transformers
Recognized component – Underwriter’s Laboratories, Inc.
High dielectric strength capability for ind
(27 views)
NE6510179 (NEC)
1 W L-BAND POWER GaAs HJ-FET
DATA SHEET
N-CHANNEL GaAs HJ-FET
NE6510179A
1 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power
(26 views)
MXP1017 (Microsemi)
Photo SCR
2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989
MXP1017
Photo SCR
Features
• • • • Light Activated Photo SCR Planar PNPN
(26 views)
NE6510179A (NEC)
1 W L-BAND POWER GaAs HJ-FET
DATA SHEET
N-CHANNEL GaAs HJ-FET
NE6510179A
1 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power
(25 views)
PAC27A03 (California Micro Devices Corp)
P/ACTIVE PRECISION VOLTAGE DIVIDER NETWORK FOR LINEAR TECHNOLOGY LT1430/1017
(24 views)
PAC27A03SR (California Micro Devices Corp)
P/ACTIVE PRECISION VOLTAGE DIVIDER NETWORK FOR LINEAR TECHNOLOGY LT1430/1017
(24 views)
MC10175 (ON Semiconductor)
Quint Latch
MC10175 Quint Latch
The MC10175 is a high speed, low power quint latch. It features five D type latches with common reset and a common two–input clock
(24 views)
NE6510179A (CEL)
MEDIUM POWER GaAs HJ-FET
FunctionalONTINUED
Characteristics
NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
NE6510179A
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE Availab
(24 views)
LT1017 (Linear Technology)
Micropower Dual Comparator
(23 views)
KOD-1017 (KODENSHI KOREA)
Photo diode IC
Photo diode IC www.DataSheet4U.com
KOD-1017
Features
Low Voltage Operation (2.5V ~ 5.5V) Frequency Characteristics : 8 MHz (Typ) Built-in Trans-Imped
(23 views)
STPS1017CB (INCHANGE)
Schottky Barrier Rectifier
Schottky Barrier Rectifier
INCHANGE Semiconductor
STPS1017CB
FEATURES ·Low leakage current ·Avalanche capability specified ·High junction temperatur
(23 views)
PT61017PEL (BOURNS)
LAN 10/100 Base-Tx
*RoHS COMPLIANT
Features
■ IEEE 802.3 Ethernet compatible ■ Designed for AMD IC manufacturers ■ Fully integrated for adapter, hub and
motherboard app
(23 views)
MC10172 (Motorola)
Dual Binary to 1-4 Decoder
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual Binary to 1-4 Decoder (High)
The MC10172 is a binary-coded 2 line to dual 4 line decoder with selected out
(22 views)
PAC27A03QR (California Micro Devices Corp)
P/ACTIVE PRECISION VOLTAGE DIVIDER NETWORK FOR LINEAR TECHNOLOGY LT1430/1017
(21 views)