110-CHANNEL Datasheet | Specifications & PDF Download

STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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PA110BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 105mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2

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J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resi

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SPECIFICATIONS No. STK442-110 1. Case Outline 14Pins (See attached outline drawing) 2. Function class AB 2 channels AF power amplifier 3. Application

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InterFET Product Folder Technical Support Order Now J110-A J110, J110A N-Channel JFET Features • InterFET N0450S Geometry • Low Noise: 1 nV/√Hz

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InterFET Product Folder Technical Support Order Now J110-A J110, J110A N-Channel JFET Features • InterFET N0450S Geometry • Low Noise: 1 nV/√Hz

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www.DataSheet4U.com J110 JFET − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed f

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STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS

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http://www.xiaoyu163.com STR-KS1100 QQ 376315150 892498299 SERVICE MANUAL Ver. 1.2 2007.07 AEP Model UK Model TEL 13942296513 QQ 376315150 89249829

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NIKO-SEM N-Channel Enhancement Mode PA110BEA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V

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PHP110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General d

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NVB110N65S3F MOSFET – Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage

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110A, 30V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFM3011T uses advanced trench technology and design to provide excellent RDS(pn) with low gat

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APM1105NU Features · 100V/16A, RDS(ON)= 100mW (max.) @ VGS=10V RDS(ON)= 170mW (max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and

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APM1105NFP Features • 100V/16A, RDS(ON)= 80mΩ(typ.) @ VGS= 10V R= DS(ON) 130mΩ(typ.) @ V= GS 4.5V • ESD Protected • Reliable and Rugged • L

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May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect tr

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PA110BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 2

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