FMV11N60E Super FAP-E3 series FUJI POWER MOSFET N.
Fuji Electric
14
11N60E - FMV11N60E
FMV11N60E Super FAP-E3 series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) ch.
INCHANGE
4
FMV11N60E - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMV11N60E ·FEATURES ·With TO-220F packaging ·Maintains both low power loss andlow noise ·Very.
Vishay
2
SiHH11N60E - E Series Power MOSFET
www.vishay.com SiHH11N60E Vishay Siliconix E Series Power MOSFET PowerPAK® 8 x 8 4 1 2 3 3 Pin 4: drain Pin 1: gate Pin 2: Kelvin connection Pin 3.
Motorola
2
MGP11N60E - Insulated Gate Bipolar Transistor
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP11N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Si.
Motorola
2
MGP11N60ED - Insulated Gate Bipolar Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Si.
Vishay
2
SiHH11N60EF - E Series Power MOSFET
www.vishay.com SiHH11N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 .
Fuji Electric
1
FMV11N60E - N-CHANNEL SILICON POWER MOSFET
www.DataSheet.co.kr FMV11N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.