.
Fuji Electric
2MBI800XNE120-50 - IGBT
2MBI800XNE120-50 Power Module (X series) 1200V / 800A / 2-in-1 package ■ Features Low VCE(sat) Low Inductance Module structure Solder pin terminals ■.30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
UTC
UTG40N120FQ-S - 1200V TRENCH GATE FIELD-STOP IGBT
UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT DESCRIPTION The UTC UTG40N120FQ.
Infineon
H25R1202 - Reverse Conducting IGBT
IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward.
Infineon Technologies
H20R1202 - Reverse Conducting IGBT
IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode .
Infineon
H30R1202 - Reverse Conducting IGBT
IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward.
Infineon Technologies
H15R1203 - Reverse conducting IGBT
IHW15N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode Features: • Powerful monolithic body diode with low forwa.
Infineon Technologies
K25H1203 - IGBT
' $ ( ## # )* + , - . # $ %% / ' $ # 0+* / # *. /0 $ %&% ' $ ( ## # / 1 21 1 3 1 4 5+ /6 #% 7* *+ % # / 8(% # # 9) , 1 # / 1# 1 .GT30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
Cypress Semiconductor
S70FL01GS - 1 Gbit (128 Mbyte) 3.0V SPI Flash
S70FL01GS 1 Gbit (128 Mbyte) 3.0V SPI Flash Features CMOS 3.0V Core Serial Peripheral Interface (SPI) with Multi-I/O – SPI Clock polarity and pha.
eupec
FF1200R17KE3 - IGBT-Module
Technische Information / technical information IGBT-Module IGBT-modules FF1200R17KE3 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / ma.
Dynex Semiconductor
DIM1200NSM17-E000 - Single Switch IGBT Module
DIM1200NSM17-E000 www.DataSheet4U.com DIM1200NSM17-E000 Single Switch IGBT Module Replaces June 2004 version, issue PDS5644-2.0 PDS5644-3.0 July 2004.
Fuji Electric
12MBI100VN-120-50 - IGBT Module
IGBT Module series for AT-NPC 3-level 12-in-1 Features Significant Low Power Loss and Size Reduction of Equipment Integrates 3-phase of AT-NPC 3-level.
Danfoss Silicon Power GmbH
DP25F1200T101623 - E2 IGBT
E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d.
Avago
HCPL-3120 - 2.5 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-3120/J312, HCNW3120 2.5 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet Description The HCPL-3120 contains a GaAsP LED while the HCPL-.
ON Semiconductor
FGY60T120SQDN - IGBT
Ultra Field Stop IGBT, 1200 V, 60 A FGY60T120SQDN General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effec.
Silikron
SMI120N75E21 - IGBT
Main Product Characteristics: VDS 1200V ID 38A RDS(on) 70mΩ 1 234 Features and Benefits: TO - 247- 4L High blocking voltage with low on-re.
JILIN SINO
TT040K120EQ - N-CHANNEL IGBT
N N-CHANNEL IGBT R TT040K120EQ MAIN CHARACTERISTICS IC 40 A VCES 1200V Vcesat-ty（p Vge=15V） 1.8V Package UPS APPLICATIONS General.
Intersil Corporation
HGTP12N60C3 - N-Channel IGBT
HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 File Number 4040.4 24A, 600V, UFS Series N-Channel IGBTs The HGTP12N60C3 and HGT1S12N60C3S are MOS.
Fairchild Semiconductor
HGTP1N120BN - N-Channel IGBT
HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT).
