12.5-Gb Datasheet | Specifications & PDF Download

MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N120R3 Data sheet Industrial Power Control IHW20N120R3 Resonant Sw

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IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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www.DataSheet4U.com Agilent 2.5 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet HCPL-3120 HCPL-J312 HCNW3120 Functional Diagram N/C 1 AN

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2MBI800XNE120-50 Power Module (X series) 1200V / 800A / 2-in-1 package ■ Features Low VCE(sat) Low Inductance Module structure Solder pin terminals ■

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Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120

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SKW07N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera

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IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Designed for: - TV – Horizontal Line Deflec

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IKW25N120T2 TrenchStop® 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter C

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IGB03N120H2 HighSpeed 2-Technology • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • 2nd generation HighSpee

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IKW40N120T2 TRENCHSTOP™ 2nd Generation Series Low Loss DuoPack : IGBT in 2nd generation TRENCHSTOP™ with soft, fast recovery anti-parallel Emitter C

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TrenchStop® Series IKW08T120 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Control

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GD25PJT120L3S STARPOWER SEMICONDUCTOR GD25PJT120L3S 1200V/25A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low co

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178ball FBGA Specification 8Gb LPDDR3 (x32) 16Gb LPDDR3 (x32) V1.0 1 Document Title FBGA 8Gb (x32, 1CS) LPDDR3 16Gb (x32, 2CS) LPDDR3 Revision Hist

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www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTE

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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