.
ETC
30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
Infineon Technologies
H20R1202 - Reverse Conducting IGBT
IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode .
Infineon
H30R1202 - Reverse Conducting IGBT
IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward.
Infineon
H25R1202 - Reverse Conducting IGBT
IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward.
Infineon Technologies
K25H1203 - IGBT
' $ ( ## # )* + , - . # $ %% / ' $ # 0+* / # *. /0 $ %&% ' $ ( ## # / 1 21 1 3 1 4 5+ /6 #% 7* *+ % # / 8(% # # 9) , 1 # / 1# 1 .
UTC
UTG40N120FQ-S - 1200V TRENCH GATE FIELD-STOP IGBT
UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT DESCRIPTION The UTC UTG40N120FQ.
Dynex Semiconductor
DIM1200NSM17-E000 - Single Switch IGBT Module
DIM1200NSM17-E000 www.DataSheet4U.com DIM1200NSM17-E000 Single Switch IGBT Module Replaces June 2004 version, issue PDS5644-2.0 PDS5644-3.0 July 2004.
Fuji Electric
12MBI100VN-120-50 - IGBT Module
IGBT Module series for AT-NPC 3-level 12-in-1 Features Significant Low Power Loss and Size Reduction of Equipment Integrates 3-phase of AT-NPC 3-level.
Infineon Technologies
H15R1203 - Reverse conducting IGBT
IHW15N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode Features: • Powerful monolithic body diode with low forwa.
Danfoss Silicon Power GmbH
DP25F1200T101623 - E2 IGBT
E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d.
ETC
GT30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
Silikron
SMI120N75E21 - IGBT
Main Product Characteristics: VDS 1200V ID 38A RDS(on) 70mΩ 1 234 Features and Benefits: TO - 247- 4L High blocking voltage with low on-re.
JILIN SINO
TT040K120EQ - N-CHANNEL IGBT
N N-CHANNEL IGBT R TT040K120EQ MAIN CHARACTERISTICS IC 40 A VCES 1200V Vcesat-ty（p Vge=15V） 1.8V Package UPS APPLICATIONS General.
Dynex Semiconductor
GP200MHS12 - Half Bridge IGBT Module
GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000 FEATURES s s s Non Pun.
Infineon
FS100R12KT4 - IGBT-Module
Technische Information / Technical Information IGBT-Module IGBT-modules FS100R12KT4 EconoPACK™2 Modul mit Trench/Feldstopp IGBT4 und Emitter Contro.
Clare
IX2127 - High-Voltage Power MOSFET & IGBT Driver
IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter Rating VOFFSET IO +/- (Source/Sink) VCSth tON / tOFF (Typical) 60.
Infineon Technologies AG
GB02N120 - SGB02N120
www.DataSheet4U.com www.DataSheet4U.com SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withsta.
Eupec
FS300R12KE3 - IGBT
Technische Information / technical information IGBT-Module IGBT-modules FS300R12KE3 - EconoPACK™+ Modul mit Trench/Feldstop IGBT3 und High Efficienc.
Infineon
IHW40N120R3 - IGBT
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW40N120R3 Data sheet Industrial Power Control IHW40N120R3 Resonant Swi.