12.5-Gb Datasheet | Specifications & PDF Download

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N120R3 Data sheet Industrial Power Control IHW20N120R3 Resonant Sw

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TrenchStop® Series IKW08T120 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Control

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www.DataSheet4U.com Agilent 2.5 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet HCPL-3120 HCPL-J312 HCNW3120 Functional Diagram N/C 1 AN

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SKW07N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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1.25 Gbps Single Mode Transceiver C-13-1250(C)-T(3)-SSC(2) Features • SC Duplex Single Mode Transceiver • Industry Standard 1x9 Footprint • Gigabit E

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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1P2o0w0eVr IMGoBdTulEeD3 ADP600B12TFNF V1.0, 2025/05 Features Electrical Features  Low QG  Low VCE,sat  Tj,op = 150°C  Low Inductance Design  Bl

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1.25 Gbps Single Mode Transceiver C-13-1250(C)-T(3)-SSC(2) Features • SC Duplex Single Mode Transceiver • Industry Standard 1x9 Footprint • Gigabit E

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Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

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IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Designed for: - TV – Horizontal Line Deflec

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IGB03N120H2 HighSpeed 2-Technology • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • 2nd generation HighSpee

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode

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Circuit Maximum Ratings Parameter Collector-Emitter Breakdown Voltage DC Collector Current, limited by Tjmax TC= 25°C TC= 100°C Diode Forward Current,

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Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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