12N60C Datasheet | Specifications & PDF Download

HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GE

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TOSSPP1122NN6600MC / TOSSFF1122NN6600MC 600V N-Channel MOSFET General Description This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced pla

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FQPF12N60C — N-Channel QFET® MOSFET November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description These N-Channel enhancement mod

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SM12N60C 600V N-Channel MOSFET TO-220F SM12N60C KONGSON Features: □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Saf

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HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gat

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S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package JEDEC STYLE TO-247 E C G Janu

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HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high vo

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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S E M I C O N D U C T O R HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs Description The HGTP12N60C3, HGT1S12N60C3 an

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HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high vo

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SVF12N60CF_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N60CF is an N-channel enhancement mode power MOS field effect transistor whic

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S E M I C O N D U C T O R HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs Description The HGTP12N60C3, HGT1S12N60C3 an

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FQP12N60C — N-Channel QFET® MOSFET March 2014 FQP12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description These N-Channel enhancement mode pow

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HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gat

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S E M I C O N D U C T O R HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs Description The HGTP12N60C3, HGT1S12N60C3 an

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HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 File Number 4040.4 24A, 600V, UFS Series N-Channel IGBTs The HGTP12N60C3 and HGT1S12N60C3S are MOS

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HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This

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N R N-CHANNEL MOSFET JCS12N60CT/FT MAIN CHARACTERISTICS Package ID 12 A VDSS 600 V Rdson（@Vgs=10V） 0.65Ω Qg 39nC z z z UPS APPLICATIONS z

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SLP12N60C / SLF12N60C SLP12N60C / SLF12N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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SLP12N60C / SLF12N60C SLP12N60C / SLF12N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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